Версия для слабовидящих
Рус Бел Eng De Cn Es
Поклонский Николай Александрович

Поклонский Николай Александрович

Биография.

Родился 14 августа 1949 г. в д. Городок Узденского р-на Минской обл., белорус. После окончания физического факультета Белорусского государственного университета в 1971 г. работал в БГУ и в НИИ прикладных физических проблем при БГУ. После окончания очной аспирантуры БГУ в 1976 г. работал в НИИ ПФП им. А.Н. Севченко в лаборатории электронных методов экспериментальной физики.

С 1993 г. работает на кафедре физики полупроводников и наноэлектроники БГУ. В 1982 г. им защищена кандидатская диссертация, а в 2001 г. докторская диссертация по теме "Статическое экранирование и прыжковый перенос зарядов в полупроводниках". В 2003 г. присвоено ученое звание профессора. Под его руководством защищено 5 кандидатских диссертаций. В 2008 г. присуждена премия имени А.Н. Севченко Белорусского государственного университета.

Занимаемая должность:

Профессор

Степень, ученое звание:

Доктор физико-математических наук, профессор

Контактная информация:

(+37517) телефон 209-51-10     e-mail poklonski@bsu.by; poklonski@tut.by

Научные интересы:

Физика и техника полупроводников; наноэлектроника; электронный спиновый резонанс; физика углеродных наноструктур

Читаемые курсы:               

Теория групп симметрии, низкоразмерные системы, равновесные состояния в кристаллах, статистическая физика полупроводников, электроника наноструктур

 

1

Publication list of Prof. Nikolai A. Poklonski

Professor N.A. Poklonski

Doctor of Physics and Mathematics

Chair of Semiconductor Physics and Nanoelectronics

Physics Department Belarusian State University

e-mail: poklonski@bsu.by, poklonski@tut.by

Tel: +37517 2095110

1. N.A. Poklonski, S.A. Vyrko, E.F. Kislyakov, N.N. Hieu, O.N. Bubel’, A.M. Popov, Yu.E. Lozovik, A.A. Knizhnik, I.V. Lebedeva, N.A. Viet. Effect of Peierls transition in armchair carbon nanotube on dynamical behaviour of encapsulated fullerene // Nanoscale Research Letters.– 2011. (in press).

2. V.K. Ksenevich, N.I. Gorbachuk, T.A. Dauzhenka, I.A. Bashmakov, N.A. Poklonski, A.D. Wieck. AC-conductivity of thin polycrystalline tin dioxide films // Acta Physica Polonica A.– 2011.– Vol. 119, No. 2.– P. 146–147. [URL: http://przyrbwn.icm.edu.pl/APP/PDF/119/a119z2p16. pdf].

3. N.A. Poklonski, N.I. Gorbachuk, D. Aleinikova. Impedance of Si/SiO2 composites in the vicinity of the percolation threshold // Physics of the Solid State.– 2011.– Vol. 53, No. 3.– P. 462–466.

4. N.A. Poklonski, E.F. Kislyakov, S.A. Vyrko, N.N. Hieu, O.N. Bubel’, A.I. Siahlo, I.V. Lebedeva, A.A Knizhnik, A.M. Popov, Yu.E. Lozovik. A low-voltage magnetic nanorelay design // SPIE Newsroom.– 19 Nov. 2010.– 3 pp. [doi: 10.1117/2.1201010.003091].

5. A.A. Kocherzhenko, F.C. Grozema, S.A. Vyrko, N.A. Poklonski, L.D.A. Siebbeles. Simulation of hopping transport based on charge carrier localization times derived for a two-level system // J. Phys. Chem. C.– 2010.– Vol. 114, No. 48.– P. 20424–20430. [doi: 10.1021/jp104673h].

6. N.A. Poklonski, S.A. Vyrko, A.G. Zabrodskii. Quasiclassical description of the nearest-neighbor hopping dc conduction via hydrogen-like donors in intermediately compensated GaAs crystals // Semicond. Sci. Technol.– 2010.– Vol. 25, No. 8.– P. 085006 (6 pp.). [doi: 10.1088/0268-1242/25/8/085006].

7. N.A. Poklonski, E.F. Kislyakov, Nguyen Ngoc Hieu, S.A. Vyrko, O.N. Bubel’, Nguyen Ai Viet. Totally symmetric vibrations of armchair carbon nanotubes // Comput. Mater. Sci.– 2010.– Vol. 49, No. 4, Suppl. 1.– P. S231–S234 [doi: 10.1016/j.commatsci.2009.12.033].

8. N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, A. Wieck. Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation // Technical Physics.– 2010.– Vol. 55, No. 10.– P. 1463–1471. [doi: 10.1134/S1063784210100117].

9. N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, V.A. Filipenia, S.B. Lastovskii, V.A. Skuratov, A. Wieck, V.P. Markevich. Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions // Microelectron. Reliab.– 2010.– Vol. 50, No. 6.– P. 813–820 [doi: 10.1016/j.microrel.2010.02.007].

10. O.V. Ershova, I.V. Lebedeva, Yu.E. Lozovik, A.M. Popov, A.A. Knizhnik, B.V. Potapkin, O.N. Bubel, E.F. Kislyakov, N.A. Poklonskii. Nanotube-based nanoelectromechanical systems: Control versus thermodynamic fluctuations // Phys. Rev. B.– 2010.– Vol. 81, No. 15.– P. 155453 (15 pp.) [doi: 10.1103/PhysRevB.81.155453].

11. N.A. Poklonski, E.F. Kislyakov, S.A. Vyrko, N.N. Hieu, O.N. Bubel’, A.I. Siahlo, I.V. Lebedeva, A.A. Knizhnik, A.M. Popov, Yu.E. Lozovik. Magnetically operated nanorelay based on two single-walled carbon nanotubes filled with endofullerenes Fe@C20 // J. Nanophotonics.– 2010.– Vol. 4.– P. 041675 (18 pp.) [doi: 10.1117/1.3417104].

12. N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, S.B. Lastovskii, A. Wieck. Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons // Semiconductors.– 2010.– Vol. 44, No. 3.– P. 380–384. [doi: 10.1134/S1063782610030188].

13. N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, V.A. Filipenia, V.A. Skuratov, A. Wieck. Kinetics of reverse resistance recovery of silicon diodes: the role of the distance the metallurgical p+n-junction-defect layer formed by 250 MeV krypton implantation // Physica B.– 2009.– Vol. 404, No. 23-24.– P. 4667–4670. [doi: 10.1016/j.physb.2009.08.129].

14. N.A. Poklonski, S.A. Vyrko, A.G. Zabrodskii. Model of hopping dc conductivity via nearest neighbor boron atoms in moderately compensated diamond crystals // Solid State Commun.– 2009.– Vol. 149, No. 31-32.– P. 1248–1253 [doi: 10.1016/j.ssc.2009.05.031].

15. N.A. Poklonski, E.F. Kislyakov, Nguyen Ngoc Hieu, O.N. Bubel’, S.A. Vyrko, Tran Cong Phong. Electronic energy band structure of uniaxially deformed (5,5) armchair carbon nanotube // Molecular Simulation.– 2009.– Vol. 35, No. 8.– P. 681–684 [doi: 10.1080/08927020802680711].

16. N.A. Poklonski, E.F. Kislyakov, O.N. Bubel’, S.A. Vyrko, Nguyen Ngoc Hieu, A.M. Popov, Y.E. Lozovik, Nguyen Ai Viet. Fullerene C20 motion in (8,8) carbon nanotube // Physics, Chemistry and Application of Nanostructures. Reviews and Short Notes: Proc. of the Int. Conf. on Nanomeeting-2009, Minsk, 26–29 May 2009 / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 2009.– P. 116–119. [ISBN: 9814280356].

17. V. Gusakov, J. Gusakova, N. Poklonski. Quantum chemical simulation of structural stability and atomic diffusion in silicon nanotubes // Physics, Chemistry and Application of Nanostructures. Reviews and Short Notes: Proc. of the Int. Conf. on Nanomeeting-2009, Minsk, 26–29 May 2009 / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 2009.– P. 104–107. [ISBN: 9814280356].

18. N.A. Poklonski, G.A. Gusakov, V.G. Bayev, N.M. Lapchuk. Optical and paramagnetic properties of synthetic diamond crystals irradiated with electrons and annealed // Semiconductors.– 2009.– Vol. 43, No. 5.– P. 568–576. [doi: 10.1134/S1063782609050042].

19. N.A. Poklonski, S.A. Vyrko, O.N. Poklonskaya, A.G. Zabrodskii. A model of ionization equilibrium and Mott transition in boron doped crystalline diamond // Phys. Status Solidi B.– 2009.– Vol. 246, No. 1.– P. 158–163. [doi: 10.1002/pssb.200844285].

20. N.A. Poklonski, S.A. Vyrko, A.G. Zabrodskii. Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects) // Semiconductors.– 2008.– Vol. 42, No. 12.– P. 1388–1394. [doi: 10.1134/S1063782608120038].

21. N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, A.V. Petrov, S.B. Lastovskii, D. Fink, A. Wieck. Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions // Nucl. Instr. and Meth. B.– 2008.– Vol. 266, No. 23.– P. 5007–5012 [doi: 10.1016/j.nimb.2008.09.001].

22. O.V. Ershova, Yu.E. Lozovik, A.M. Popov, O.N. Bubel’, E.F. Kislyakov, N.A. Poklonski. NEMS based on carbon nanotube: New method of control // Fullerenes, Nanotubes and Carbon Nanostructures.– 2008.– Vol. 16, No. 5-6.– P. 374–378. [doi: 10.1080/15363830802269281].

23. N.A. Poklonski, E.F. Kislyakov, Nguyen Ngoc Hieu, O.N. Bubel’, S.A. Vyrko, A.M. Popov, Yu.E. Lozovik. Uniaxially deformed (5,5) carbon nanotube: Structural transitions // Chem. Phys. Lett.– 2008.– Vol. 464, No. 4-6.– P. 187–191. [doi: 10.1016/j.cplett.2008.09.011].

24. O.V. Ershova, Yu.E. Lozovik, A.M. Popov, O.N. Bubel’, E.F. Kislyakov, N.A. Poklonskiĭ, A.A. Knizhnik, I.V. Lebedeva. Control of the motion of nanoelectromechanical systems based on carbon nanotubes by electric fields // Journal of Experimental and Theoretical Physics.–V. 107, No. 4.– P. 653–661. [doi: 10.1134/S1063776108100130].

25. N.A. Poklonski, Nguyen Ngoc Hieu, E.F. Kislyakov, S.A. Vyrko, A.I. Siahlo, A.M. Popov, Yu.E. Lozovik. Interwall conductance in double-walled armchair carbon nanotubes // Phys. Lett. A.– 2008.– Vol. 372, No. 35.– P. 5706–5711 [doi: 10.1016/j.physleta.2008.06.085].

26. N.A. Poklonski, S.A. Vyrko, A.G. Zabrodskii. Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level // Semiconductors.– 2007.– Vol. 41, No. 11.– P. 1300–1306. [doi: 10.1134/S1063782607110048].

27. N.A. Poklonski, A.A. Kocherzhenko, S.A. Vyrko, A.T. Vlassov. A comparison of two-particle models for conduction electron scattering on hydrogen-like impurity ions in non-degenerate semiconductors // Phys. Status Solidi B.– 2007.– Vol. 244, No. 10.– P. 3703–3710 [doi: 10.1002/pssb.200642528].

28. O.V. Ershova, Yu.E. Lozovik, A.M. Popov, O.N. Bubel’, N.A. Poklonskiĭ, E.F. Kislyakov. Control of the motion of nanoelectromechanical systems based on carbon nanotubes // Physics of the Solid State.– 2007.– Vol. 49, No. 10.– P. 2010–2014. [doi: 10.1134/S1063783407100332].

29. N.A. Poklonski, N.M. Lapchuk, A.V. Khomich, F.-X. Lu, W.-Zh. Tang, V.G. Ralchenko, I.I. Vlasov, M.V. Chukichev, Sambuu Munkhtsetseg. Nitrogen-doped chemical vapour deposited diamond: A new material for room-temperature solid state maser // Chin. Phys. Lett.– 2007.– Vol. 24, No. 7.– P. 2088–2090 [doi: 10.1088/0256-307X/24/7/083].

30. N.A. Poklonski, E.F. Kislyakov, O.N. Bubel’, S.A. Vyrko, N.N. Hieu, A.M. Popov, Y.E. Lozovik. Structural phase transitions in (5,5) carbon nanotube controlled by its expansion: Calculations by the molecular orbital method // Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proc. of the Int. Conf. on Nanomeeting-2007, Minsk, 22-25 May 2007 / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 2007.– P. 237–240. [ISBN: 9812705996].

31. A.M. Popov, Y.E. Lozovik, O.V. Ershova, O.N. Bubel’, E.F. Kislyakov, N.A. Poklonski. A nanoactuator based on carbon nanotube: New method of control // Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proc. of the Int. Conf. on Nanomeeting-2007, Minsk, 22-25 May 2007 / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 2007.– P. 581–584. [ISBN: 9812705996].

32. A.V. Khomich, N.A. Poklonskii, N.M. Lapchuk, R.A. Khmel’nitskii, V.A. Dravin, S. Munkhtsetseg. Optical and paramagnetic properties of natural diamonds implanted with hydrogen ions // Journal of Applied Spectroscopy.– 2007.– Vol. 74, No. 4.– P. 537–543. [doi: 10.1007/s10812-007-0085-9].

33. S. Munkhtsetseg, A.V. Khomich, N.A. Poklonskii, J. Davaasambuu. Infrared absorption spectra of coals with different degrees of coalification // Journal of Applied Spectroscopy.– 2007.– Vol. 74, No. 3.– P. 338–343. [doi: 10.1007/s10812-007-0055-2].

34. N.A. Poklonski, S.A. Vyrko, A.G. Zabrodskii. Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B) // Semiconductors.– 2007.– Vol. 41, No. 1.– P. 30–36. [doi: 10.1134/S1063782607010083].

35. N.A. Poklonskiĭ, N.M. Lapchuk, A.O. Korobko. Magnetic ordering in crystalline Si implanted with Co ions with intermediate doses // Semiconductors.– 2006.– Vol. 40, No. 10.– P. 1151–1154. [doi: 10.1134/S1063782606100058].

36. N.A. Poklonski, S.V. Shpakovski, N.I. Gorbachuk, S.B. Lastovskii. Negative capacitance (impedance of the inductive type) of silicon p+-n junctions irradiated with fast electrons // Semiconductors.– 2006.– Vol. 40, No. 7.– P. 803–807 [doi: 10.1134/S1063782606070128].

37. N.A. Poklonski, A.A. Kocherzhenko, A.I. Benediktovitch, V.V. Mitsianok, A.M. Zaitsev. Simulation of dc conductance of two-dimensional heterogeneous system: application to carbon wires made by ion irradiation on polycrystalline diamond // Phys. Status Solidi B.– 2006.– Vol. 243, No. 6.– P. 1212–1218. [doi: 10.1002/pssb.200541079].

38. N.A. Poklonski. Inversion of the EPR signal from P1 centers in a synthetic diamond single crystal under normal conditions // Technical Physics Letters.– 2006.– Vol. 32, No. 4.– P. 309–311. [doi: 10.1134/S1063785006040109].

39. N.A. Poklonski, S.A. Vyrko, A.G. Zabrodskiĭ. The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors // Semiconductors.– 2006.– Vol. 40, No. 4.– P. 394–400. [doi: 10.1134/S106378260604004X].

40. N.A. Poklonskii, T.M. Lapchuk, V.G. Baev, G.A. Gusakov. Inversion of the electron spin resonance signal from a P1 center in a synthetic diamond crystal // Journal of Applied Spectroscopy.– 2006.– Vol. 73, No. 1.– P. 5–9. [doi: 10.1007/s10812-006-0029-9].

41. A.V. Khomich, V.P. Varnin, I.G. Teremetskaya, N.A. Poklonskii, N.M. Lapchuk, A.O. Korobko. Hydrogenated nanoporous diamond films // Inorganic Materials.– 2005.– Vol. 41, No. 8.– P. 812–818. [doi: 10.1007/s10789-005-0217-7].

42. N.A. Poklonski, T.M. Lapchuk, N.I. Gorbachuk, V.A. Nikolaenko, I.V. Bachuchin. Nanostructuring of crystalline grains of natural diamond using ionizing radiation // Semiconductors.– 2005.– Vol. 39, No. 8.– P. 894–897. [doi: 10.1134/1.2010681].

43. N.A. Poklonski, S.A. Vyrko, A.G. Zabrodskii. Fluctuation model of the high-frequency hopping electrical conductivity of moderately compensated semiconductors with hydrogenic impurities // Physics of the Solid State.– 2005.– Vol. 47, No. 7.– P. 1236–1244. [doi: 10.1134/1.1992598].

44. N.A. Poklonski, S.L. Podenok, S.A. Vyrko. Field emission from 2D layer // Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to Nanomeeting-2005, Minsk, 24–27 May 2005 / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 2005.– P. 144–147. [ISBN: 9812562885].

45. N.A. Poklonski, E.F. Kislyakov, L. Kuzmin, M. Tarasov, E.E.B. Campbell. On the phonon mechanism of energy transfer from conduction electrons to lattice in single-wall metallic carbon nanotubes at low temperatures // Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to Nanomeeting-2005, Minsk, 24–27 May 2005 / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 2005.– P. 235–239. [ISBN: 9812562885].

46. N.A. Poklonski, N.M. Lapchuk, T.M. Lapchuk. Inverted EPR signal from nitrogen defects in a synthetic diamond single crystal at room temperature // JETP Letters.– Vol. 80, No. 12.– P. 748–751. [doi: 10.1134/1.1868799].

47. N.A. Poklonski, S.A. Vyrko, A.A. Kocherzhenko. Ramo–Shockley relation for a series RCL circuit // Technical Physics.– 2004.– Vol. 49, No. 11.– P. 1469–1472. [doi: 10.1134/1.1826192].

48. N.A. Poklonski, E.F. Kislyakov, O.N. Bubel’, S.A. Vyrko. Isomerization and fission of highly charged C60 // Nanomodeling / Ed. by A. Lakhtakia, S.A. Maksimenko, Proceedings of SPIE (the SPIE 49th Annual Meeting) Denver, Colorado USA, 2–6 August 2004.– Vol. 5509 / SPIE, Bellingham, WA, 2004.– P. 179–186. [doi: 10.1117/12.557525].

49. N.A. Poklonski, S.A. Vyrko, A.G. Zabrodskii. Electrostatic models of insulator–metal and metal–insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities // Physics of the Solid State.– 2004.– Vol. 46, No. 6.– P. 1101–1106. [doi: 10.1134/1.1767252].

50. N.A. Poklonski, S.A. Vyrko, V.I. Yatskevich, A.A. Kocherzhenko. A semiclassical approach to Coulomb scattering of conduction electrons on ionized impurities in nondegenerate semiconductors // J. Appl. Phys.– 2003.– Vol. 93, No. 12.– P. 9749–9752 [doi: 10.1063/1.1573735].

51. N.A. Poklonskii, S.A. Vyrko, A.G. Zabrodskii, S.V. Egorov. Numerical simulation of the temperature dependence of the ionization energy of hydrogen-like impurities in semiconductors: Application to transmutation-doped Ge:Ga // Physics of the Solid State.– 2003.– Vol. 45, No. 11.– P. 2053–2059. [doi: 10.1134/1.1626737].

52. N.A. Poklonskii, E.F. Kislyakov, S.A. Vyrko. On the temperature dependence of the dc conductivity of a semiconductor quantum wire in an insulator // Semiconductors.– 2003.– Vol. 37, No. 6.– P. 710–712. [doi: 10.1134/1.1582540].

53. N.A. Poklonski, E.F. Kislyakov, S.L. Podenok. Electronic structure of metallic single-wall carbon nanotubes: tight-binding versus free-electron approximation // Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to Nanomeeting-2003, Minsk, 20–23 May 2003 / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 2003.– P. 186–189. [ISBN: 9812383816].

54. N.A. Poklonski, V.V. Mityanok, S.A. Vyrko. The Rameau–Shockley relation for an RCL circuit // Technical Physics Letters.– 2002.– Vol. 28, No. 8.– P. 635–636. [doi: 10.1134/1.1505534].

55. N.A. Poklonskii, S.A. Vyrko. Screening of an electric field and the quasi-static capacitance of an induced charge in semiconductors with hopping conductivity // Russian Physics Journal.– 2002.– Vol. 45, No. 10.– P. 1001–1007. [doi: 10.1023/A:1022867001332].

56. N.A. Poklonski, S.A. Vyrko. Nonlinear screening of the field of a dopant ion on the metal side of the Mott phase transition in semiconductors // Physics of the Solid State.– 2002.– Vol. 44, No. 7.– P. 1235–1240. [doi: 10.1134/1.1494615].

57. N.A. Poklonskii, S.A. Vyrko. Electrostatic model of edge luminescence of heavily doped degenerate semiconductors // Journal of Applied Spectroscopy.– Vol. 69, No. 3.– P. 434–443. [doi: 10.1023/A:1019715602928].

58. N.A. Poklonskii, E.F. Kislyakov, O.N. Bubel’, S.A. Vyrko. Coulomb distortion of carbododecahedron C // Journal of Applied Spectroscopy.– 2002.– Vol. 69, No. 3.– P. 323–327. [doi: 10.1023/A:1019714211588].

59. N.A. Poklonski, S.Yu. Lopatin. A lattice model of thermopower in hopping conduction: Application to neutron-doped crystalline germanium // Physics of the Solid State.– 2001.– Vol. 43, No. 12.– P. 2219–2228. [doi: 10.1134/1.1427945].

60. N.I. Gorbachuk, V.S. Gurin, N.A. Poklonski. Effect of the moisture content on the electrical conductivity of SiO2/LiCl xerogels // Glass Physics and Chemistry.– 2001.– Vol. 27, No. 6.– P. 520–526. [doi: 10.1023/A:1013246208529].

61. N.A. Poklonski, E.F. Kislyakov, G.G. Fedoruk, D.I. Sagaidak, A.I. Siaglo, S.A. Vyrko. Switching effect in lead phthalocyanine nanostructure // Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to Nanomeeting-2001, Minsk, 22–25 May 2001 / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 2001.– P. 202–205. [ISBN: 9810246188].

62. N.A. Poklonski, A.I. Siaglo, S.A. Vyrko, V.V. Mitianok. The screening of extra point charge in the few particles Coulomb system // Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to Nanomeeting-2001, Minsk, 22–25 May 2001 / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 2001.– P. 106–109. [ISBN: 9810246188].

63. N.A. Poklonskii, I.V. Pototskii, N.I. Gorbachuk. X-ray-induced paramagnetic centers in SiO2 xerogels // Inorganic Materials.– 2001.– Vol. 37, No. 5.– P. 482–486. [doi: 10.1023/A:1017528801182].

64. N.A. Poklonskii, N.I. Gorbachuk. Electron paramagnetic resonance of percolation soot clusters in polyethylene // Journal of Applied Spectroscopy.– 2001.– Vol. 68, No. 5.– P. 776–782. [doi: 10.1023/A:1013233631167].

65. N.A. Poklonskii, T.M. Lapchuk, N.I. Gorbachuk. Electron spin resonance measurements of a demagnetizing field on the surface of metal samples // Journal of Applied Spectroscopy.– 2001.– Vol. 68, No. 4.– P. 543–547. [doi: 10.1023/A:1012511517323].

66. N.A. Poklonskii, A.I. Syaglo, S.A. Vyrko. Analog of the Auger effect in radiative decay of a trion in a quantum well // Journal of Applied Spectroscopy.– 2001.– Vol. 68, No. 3.– P. 371–376. [doi: 10.1023/A:1011961603382].

67. N.A. Poklonski, E.F. Kislyakov, D.I. Sagaidak, A.I. Siaglo, G.G. Fedoruk. One-dimensional quantum transport in lead phthalocyanine nanostructures // Technical Physics Letters.– 2001.– Vol. 27, No. 3.– P. 180–182. [doi: 10.1134/1.1359818].

68. N.A. Poklonski, A.I. Siaglo. Electrostatic model of band-gap renormalization and the photoluminescence line shape in a GaAs/AlGaAs two-dimensional layer at a high excitation level // Physics of the Solid State.– 2001.– Vol. 43, No. 1.– P. 157–165. [doi: 10.1134/1.1340202].

69. O.N. Bubel’, S.A. Vyrko, E.F. Kislyakov, N.A. Poklonskii. Totally symmetric vibrational modes of fullerene C60 // JETP Letters.– 2000.– Vol. 71, No. 12.– P. 508–510. [doi: 10.1134/1.1307477].

70. N.A. Poklonskii, E.F. Kislyakov, G.G. Fedoruk, S.A. Vyrko. Electronic structure model of a metal-filled carbon nanotube // Physics of the Solid State.– 2000.– Vol. 42, No. 10.– P. 1966–1971. [doi: 10.1134/1.1318895].

71. A.G. Zakharov, N.A. Poklonskii, V.S. Varichenko. The microwave photoconductivity of electrons flying over natural diamond // Technical Physics.– 2000.– Vol. 45, No. 10.– P. 1325–1330. [doi: 10.1134/1.1318971].

72. V.A. Dorosinets, V.A. Samuilov, N.A. Poklonski A. Belous, K.G. Kyritsi, A.N. Anagnostopoulos, G.L. Bleris, R.L. Carter, A. Čenys. Electrical properties of an a-Si/Si(p)/Si(n) heterojunction device // Semicond. Sci. Technol.– 2000.– Vol. 15, No. 10.– P. 980–984. [doi: 10.1088/0268-1242/15/10/309].

73. A.G. Zakharov, N.A. Poklonskii, V.S. Varichenko, A.G. Gontar’. Characteristics of microwave photoconductivity of natural diamond in the spectral range 200–250 nm // Physics of the Solid State.– 2000.– Vol. 42, No. 4.– P. 664–669. [doi: 10.1134/1.1131267].

74. N.A. Poklonskii, S.Yu. Lopatin, A.G. Zabrodskii. A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge:Ga // Physics of the Solid State.– 2000.– Vol. 42, No. 3.– P. 441–449. [doi: 10.1134/1.1131228].

75. N.A. Poklonskii, S.Yu. Lopatin. A model of hopping and band DC photoconduction in doped crystals // Physics of the Solid State.– 2000.– Vol. 42, No. 2.– P. 224–229. [doi: 10.1134/1.1131150].

76. V.A. Dorosinets, V.A. Samuilov, N.A. Poklonski, K.G. Kyritsi, A.N. Anagnostopoulos, G.L. Bleris, A. Čenys. Current pulses and high-frequency oscillations in a-Si/Si(p)/Si(n) heterojunction device // Semicond. Sci. Technol.– 1999.– Vol. 14, No. 10.– P. 897–900. [doi: 10.1088/0268-1242/14/10/303].

77. A.V. Bashun, N.I. Gorbachuk, N.M. Lapchuk, N.A. Poklonski. The features of paramagnetic nitrogen distribution in synthetic diamonds // Physics, Chemistry and Application of Nanostructures. Reviews and Short Notes to Nanomeeting-99 (Minsk) / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 1999.– P. 163–165. [ISBN: 9810238894].

78. N.A. Poklonski, F.N. Borovik, A.I. Siaglo. Photoionization of D0- and D--centers in a quantum well // Physics, Chemistry and Application of Nanostructures. Reviews and Short Notes to Nanomeeting-99 (Minsk) / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 1999.– P. 63–66. [ISBN: 9810238894].

79. N.A. Poklonskii, A.I. Syaglo, G. Biskupski. A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation // Semiconductors.– 1999.– Vol. 33, No. 4.– P. 402–406. [doi: 10.1134/1.1187702].

80. N.A. Poklonskii, A.I. Syaglo. Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon // Semiconductors.– 1999.– Vol. 33, No. 4.– P. 391–393. [doi: 10.1134/1.1187700].

81. N.A. Poklonskii, S. Yu. Lopatin. Stationary hopping photoconduction among multiply charged impurity atoms in crystals // Physics of the Solid State.– 1998.– Vol. 40, No. 10.– P. 1636–1640. [doi: 10.1134/1.1130623].

82. N.A. Poklonskii, A.I. Syaglo. On electrostatic models of a metal-insulator phase transition in crystalline semiconductors with hydrogen-like impurities // Physics of the Solid State.– 1998.– Vol. 40, No. 1.– P. 132–135. [doi: 10.1134/1.1130252].

83. N.A. Poklonski, A.V. Denisenko, S.Yu. Lopatin, A.I. Siaglo. Ionized impurity scattering of charge carriers in crystalline semiconductors // Phys. Status Solidi B.– 1998.– Vol. 206, No. 2.– P. 713–721. [doi: 10.1002/(SICI)1521-3951(199804)206:2<713::AID-PSSB713>3.0.CO;2-V].

84. N.A. Poklonskii, S.Yu. Lopatin. Superconducting-coil-resistor circuit with electric field quadratic in the current // Technical Physics Letters.– 1998.– Vol. 24, No. 1.– P. 45–46 [doi: 10.1134/1.1261987].

85. N.A. Poklonski, A.I. Siaglo. Simple approach to calculate band gap renormalization in semiconductor quantum wells // Physics, Chemistry and Application of Nanostructures. Review and Short Notes to Nanomeeting-97 (Minsk) / Eds. V.E. Borisenko et al.– Singapore: World Scientific, 1997.– P. 125–128. [ISBN: 981023113X].

86. N.A. Poklonskii, A.I. Syaglo. Quasiclassical calculation of the Fermi level and of the forbidden energy band narrowing in crystal semiconductors with heavy doping // Journal of Applied Spectroscopy.– 1997.– Vol. 64, No. 3.– P. 380–386. [doi: 10.1007/BF02675103].

87. N.A. Poklonskii, A.I. Syaglo, F.N. Borovik. Quasiclassical calculation of narrowing of the band gap in silicon with heavy doping // Semiconductors.– 1996.– Vol. 30, No. 10.– P. 924–927. [abstract: 1996Semic..30..924P].

88. V.S. Gurin, N.A. Poklonskii, N.I. Gorbachuk, I.I. Kolkovskii. Effect of x rays on the electrical conductivity of polycrystalline silver iodide // Technical Physics.– 1996.– Vol. 41, No. 7.– P. 732–733. [abstract: 1996JTePh..41..732G].

89. D.L. Pulfrey, D.D. Shulman, V. Samujlov, E. Bondarionok, V. Krasnitski, N. Poklonski, V. Stelmakh. Inverted heterojunction bipolar device having undoped amorphous silicon layer: пат. 5285083 США, МПК5 H01L 29/161; заявл. 27.04.1992; опубл. 8.02.1994. [URL: http://www. freepatentsonline.com/5285083.pdf].

90. V.V. Mityanok, N.A. Poklonskii. Relativistic electrostatic field of a direct-current conductor // Technical Physics.– 1993.– Vol. 38, No. 1.– P. 49–50. [abstract: 1993JTePh..38...49M].

91. V.A. Dorosinets, N.A. Poklonskii, V.A. Samuilov, V.F. Stel’makh. Ultralow-frequency spontaneous oscillations of the current in polycrystalline silicon // Sov. Phys. Semicond.– 1988.– Vol. 22, No. 4.– P. 476–477. [ArXiv: 1102.1086].

92. В.V. Klimkovich, N.A. Poklonski, V.F. Stelmakh. The temperature dependence of the ac hopping conductivity of lightly compensated semiconductors // Phys. Status Solidi B.– 1986.– Vol. 134, No. 2.– P. 763–770. [doi: 10.1002/pssb.2221340237].

93. B.V. Klimkovich, N.A. Poklonskii, V.F. Stelmakh. High-frequency hopping magnetoresistance of weakly compensated n-type germanium in weak and intermediate magnetic-fields // Sov. Phys. Semicond.– 1985.– Vol. 19, No. 7.– P. 756–758.

94. B.V. Klimkovich, N.A. Poklonskii, V.F. Stelmakh. Temperature-dependence of the ac hopping electrical-conductivity of weakly compensated semiconductors // Sov. Phys. Semicond.– 1985.– Vol. 19, No. 5.– P. 525–527.

95. B.V. Klimkovich, N.A. Poklonskii, V.F. Stelmakh. Alternating-current hopping electrical-conductivity of covalent semiconductors with deep-level defects // Sov. Phys. Semicond.– 1985.– Vol. 19, No. 5.– P. 522–524.

96. N.A. Poklonskii. Screening of the electric field in covalent crystals containing point defects // Soviet Physics Journal.– 1984.– Vol. 27, No. 11.– P. 945–947. [doi: 10.1007/BF00902146].

97. L.V. Govor, V.P. Dobrego, N.A. Poklonskii. Impurity-concentration dependence of the thermal ionization-energy of gallium atoms in germanium-crystals // Sov. Phys. Semicond.– 1984.– Vol. 18, No. 11.– P. 1292–1293.

98. B.V. Klimkovich, N.A. Poklonskii, V.F. Stel’makh. Peculiarities of the low-temperature conductivity of radiation-treated p-Ge // Soviet Physics Journal.– 1984.– Vol. 27, No. 5.– P. 403–406. [doi: 10.1007/BF00898611].

99. B.V. Klimkovich, N.A. Poklonskii, V.F. Stelmakh. Hopping electrical-conduction in a many-valley semiconductor under ac conditions // Sov. Phys. Semicond.– 1983.– Vol. 17, No. 9.– P. 1096–1097.

100. B.V. Klimkovich, N.A. Poklonskii, V.F. Stelmakh. Hopping magnetoresistance in an alternating-current // Sov. Phys. Semicond.– 1983.– Vol. 17, No. 5.– P. 557–559.

101. N.A. Poklonski, V.F. Stelmakh. Screening of electrostatic fields in crystalline semiconductors by electrons hopping over defects // Phys. Status Solidi B.– 1983.– Vol. 117, No. 1.– P. 93–99. [doi: 10.1002/pssb.2221170109].

102. N.A. Poklonski, V.F. Stelmakh, V.D. Tkachev, S.V. Voitikov. Screening of electrostatic fields in semiconductors by multicharged defects // Phys. Status Solidi B.– 1978.– Vol. 88, No. 2.– P. K165–K168. [doi: 10.1002/pssb.2220880266].

103. N.S. Minaev, N.A. Poklonskii, V.F. Stelmakh, V.D. Tkachev. Mobility of electrons and holes in semiconductors with multiply charged defects // Sov. Phys. Semicond.– 1974.– Vol. 8, No. 6.– P. 702–705.

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